Researchers from North Carolina State University have developed a memory device that is soft and functions well in wet environments – opening the door to a new generation of biocompatible electronic devices.
Nanophysics
Jul 14, 2011
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South Korea's Hynix Semiconductor and Japanese electronics giant Toshiba said Wednesday they have agreed to jointly develop a next-generation memory device.
Electronics & Semiconductors
Jul 13, 2011
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Elpida Memory today announced that its researchers have developed the technology to mass manufacture a 0.8mm four-layer DRAM package, the thinnest memory device in the DRAM industry.
Electronics & Semiconductors
Jun 22, 2011
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Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced the DRAM industry's first-ever use of high-k metal gate (HKMG) technology to develop a 2-gigabit DDR2 Mobile RAM (LPDDR2) ...
Electronics & Semiconductors
Jun 15, 2011
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NEC Corporation and Tohoku University announced today the development of the world's first content addressable memory (CAM) that both maintains the same high operation speed and non-volatile operation as existing circuits ...
Electronics & Semiconductors
Jun 13, 2011
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A University of California, San Diego faculty-student team is about to demonstrate a first-of-its kind, phase-change memory solid state storage device that provides performance thousands of times faster than a conventional ...
Engineering
Jun 2, 2011
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(PhysOrg.com) -- A recent study at the National Institute of Standards and Technology may have revealed the optimal characteristics for a new type of computer memory now under development. The work, performed in collaboration ...
Nanophysics
May 19, 2011
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Samsung Electronics today announced that it has started the industry's first production of a high-performance toggle DDR 2.0 multi-level-cell (MLC) memory chip. The new NAND flash chip features a 64 gigabit (Gb) density, ...
Electronics & Semiconductors
May 13, 2011
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Elpida Memory today announced that it has developed a 4-gigabit DDR2 Mobile RAM that employs state-of-the-art 30nm process. This new Mobile RAM features a low operating voltage of 1.2V, achieves a 1066Mbps high-speed data ...
Electronics & Semiconductors
Apr 7, 2011
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NXP Semiconductors today unveiled its groundbreaking UCODE I2C chip, which features an integrated I2C interface and a large 3,328-bit user memory. The UCODE I2C IC brings the power of Gen2 UHF to embedded systems, enabling ...
Electronics & Semiconductors
Apr 6, 2011
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