For the first time, engineering researchers have been able to watch in real time the nanoscale process of a ferroelectric memory bit switching between the 0 and 1 states.
General Physics
Nov 17, 2011
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Tablets are fast becoming the media device of choice nowadays for work and play, particularly with the advent of iPads and the Samsung Galaxy Tab into the mobile device market. With a volume of 19.5 million of media tablet ...
Hardware
Nov 17, 2011
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(PhysOrg.com) -- A team of researchers from the NIST Center for Nanoscale Science and Technology, the University of Muenster, and West Virginia University have demonstrated control of magnetic thermal fluctuations using current. ...
Nanophysics
Nov 17, 2011
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Toshiba Corporation today announced it has developed circuit techniques for embedded SRAM that operate in a wide supply voltage range, from 0.5V to 1.0V, that effectively contribute to lower power consumption by electronic ...
Electronics & Semiconductors
Nov 16, 2011
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(PhysOrg.com) -- Research engineers at Yale University have succeeded in building a mechanical memory switch that is controlled and then read by lasers. In their paper published in Nature Nanotechnology, the team, led by ...
An advanced material that could help bring about next-generation "spintronic" computers has revealed one of its fundamental secrets to a team of scientists from Argonne National Laboratory (ANL) and the National Institute ...
Condensed Matter
Oct 19, 2011
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India on Wednesday launched its long-awaited "computer for the masses", unveiling a $46 tablet device designed to bring the information technology revolution to tens of millions of students.
Consumer & Gadgets
Oct 5, 2011
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(PhysOrg.com) -- Researchers are developing a new type of computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices.
Nanophysics
Sep 27, 2011
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Earlier this summer, Apple eliminated its entry-level plastic-clad MacBook to make the just-updated MacBook Air line, once a pricey niche laptop, its mainstream computer.
Consumer & Gadgets
Aug 31, 2011
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(PhysOrg.com) -- Korean researchers working out of the Samsung Advanced Institute of Technology report in a paper published in Nature Materials, that they've been able to create a non-volatile Resistance RAM (ReRam) chip ...
