University of Minnesota electrical and computer engineering researchers have created a magnetic tunnel junction that can be switched by a pulse of light lasting one trillionth of a second—a new record. The magnetic tunnel ...
General Physics
Mar 9, 2017
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1221
(Phys.org) -- Cornell researchers have demonstrated a new strategy for making energy- efficient, reliable nonvolatile magnetic memory devices -- which retain information without electric power.
General Physics
May 7, 2012
1
0
(PhysOrg.com) -- Toshiba Corporation today announced that it has developed MOSFET cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and magnetic moment ...
Electronics & Semiconductors
Dec 9, 2009
1
0
The National Institute for Materials Science (NIMS) has achieved a tunnel magnetoresistance (TMR) ratio of 631% at room temperature, breaking the previous world record, which had stood for 15 years.
General Physics
May 9, 2023
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22
A tunnel junction is a device consisting of two conducting layers separated by an insulating layer. Classically, the resistance for driving current across an insulating layer is infinite; however, when the insulating layer ...
Nanophysics
Aug 21, 2020
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9
The ability to control the magnetization of electrodes made from ferromagnets could help develop more energy-efficient devices for spintronic applications, including data storage technologies, wearable electronics and implantable ...
General Physics
Apr 27, 2020
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4
Researchers at the Center for Innovative Integrated Electronic Systems (CIES) at Tohoku University have successfully observed microscopic chemical bonding states in ultrathin MgO—an important determinant in STT-MRAM performance. ...
Materials Science
Aug 5, 2019
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5
A research group from Tohoku University has revealed ultra-small magnetic tunnel junctions (MTJs) down to a single-digit-nanometer scale that have sufficient retention properties and yet can be switched by a current.
General Physics
Feb 21, 2018
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15
Random-access memory (RAM) is a fast electronic device used in computers to temporarily store data. Traditional RAM is based on the flow of electrical current for data processing. To make RAM faster, more energy efficient ...
General Physics
Dec 5, 2012
0
0
Researchers have demonstrated theoretically that oscillation of 5–140 GHz is possible by supplying direct current to a ferromagnetic nanocontact device.
General Physics
Nov 8, 2012
1
0
