Spin polarization achieved in room temperature silicon

(PhysOrg.com) -- A group in The Netherlands has achieved a first: injection of spin-polarized electrons in silicon at room temperature. This has previously been observed only at extremely low temperatures, and the achievement ...

Creating Denser Magnetic Memory

(PhysOrg.com) -- One of the issues afflicting magnetic memory is the fact that it is difficult to store information for as long as 10 years. In order to overcome this problem, scientists and engineers have been looking for ...

Electric Switches Hold Promise for Data Storage

(PhysOrg.com) -- Multiferroics are materials in which unique combinations of electric and magnetic properties can simultaneously coexist. They are potential cornerstones in future magnetic data storage and spintronic devices ...

Electron-bending effect could boost computer memory

A new magnetic material developed by RIKEN physicists could boost computer memory storage by enabling higher memory density and faster memory writing speeds. Their research has been published in the journal Nature Communications.

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