Related topics: transistors

World's first GaN HEMT T/R module operating in the C-Ku band

Fujitsu Laboratories today announced that it has successfully developed the world's first transmitter/receiver (T/R) module using gallium-nitride (GaN)high electron mobility transistor (HEMT) technology that features an output ...

Researchers create electronic diodes beyond 5G performance

David Storm, a research physicist, and Tyler Growden, an electrical engineer, both with the U.S. Naval Research Laboratory, developed a new gallium nitride-based electrical component called a resonant tunneling diode (RTD) ...

Faster, smaller and more economical gallium nitride transistors

For the first time, researchers from CNRS France and ETH Zurich have succeeded in producing high-performance high-electron-mobility transistors (HEMTs) made of gallium nitride (GaN) on a silicon(110) wafer. This makes these ...

Physicists create world's smallest semiconductor laser

Physicists at The University of Texas at Austin, in collaboration with colleagues in Taiwan and China, have developed the world's smallest semiconductor laser, a breakthrough for emerging photonic technology with applications ...

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