Data storage takes an electric turn

(PhysOrg.com) -- German scientists from the Forschungszentrum Julich and the Max Planck Institute of Microstructure Physics in Halle have discovered the basis for the next generation of memory devices. In a ferroelectric ...

Fundamental discovery could lead to better memory chips

(PhysOrg.com) -- Engineering researchers at the University of Michigan have found a way to improve the performance of ferroelectric materials, which have the potential to make memory devices with more storage capacity than ...

Scientists develop fatigue-free ferroelectric material

Researchers at the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences, in collaboration with research groups from the University of Electronic Science and Technology of China ...

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