Researchers close in on new nonvolatile memory

Researchers from the Moscow Institute of Physics and Technology, along with their colleagues from Germany and the U.S., have achieved a breakthrough in nonvolatile memory devices. The team came up with a unique method for ...

Small and stable ferroelectric domains

Researchers are one step closer to figuring out a way to make nano-sized ferroelectric domains more stable, reports a new study in journal Science.

page 3 from 5