Researchers at the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences, in collaboration with research groups from the University of Electronic Science and Technology of China ...
Nanophysics
Jun 6, 2024
0
150
Traditional memory devices are volatile and the current non-volatile ones rely on either ferromagnetic or ferroelectric materials for data storage. In ferromagnetic devices, data is written or stored by aligning magnetic ...
Nanophysics
Apr 26, 2024
0
46
A key objective in the electronics engineering field is to develop transistors and other electronic components that are increasingly compact and efficient, utilizing readily available processes and materials. Among the transistors ...
Researchers from the Moscow Institute of Physics and Technology, along with their colleagues from Germany and the U.S., have achieved a breakthrough in nonvolatile memory devices. The team came up with a unique method for ...
Nanomaterials
Dec 17, 2019
0
41
We are reaching the limits of silicon capabilities in terms of data storage density and speed of memory devices. One of the potential next-generation data storage elements is the magnetic skyrmion. A team at the Center for ...
General Physics
Nov 14, 2018
0
82
The electrical and mechanical responses of crystal materials, and the control of their coupled effect, form one of the central themes in material science. They are vital to applications such as ultrasonic generators and non-volatile ...
General Physics
Sep 17, 2018
1
18
Through the combined effect of flexoelectricity and piezoelectricity, researchers at the ICN2 led by ICREA Gustau Catalán in collaboration with the UAB have found that polar materials can be made more or less resistant to ...
Materials Science
Oct 20, 2017
0
4
(Phys.org)—A team of researchers from institutions in Australia, the U.S. and China has developed a functional prototype nonvolatile ferroelectric domain wall memory. In their paper published on the open access site Science ...
For the first time, researchers have been able to deposit an ultra-thin oxide ferroelectric film onto a flexible polymer substrate. The research team used the flexible ferroelectric thin films to make non-volatile memory ...
Materials Science
Apr 13, 2017
0
1137
Traditional computer memory, known as DRAM, uses electric fields to store information. In DRAM, the presence or absence of an electric charge is indicated either by number 1 or number 0. Unfortunately, this type of information ...
Condensed Matter
Dec 21, 2016
0
21
