Samsung Electronics announced today that it has developed and validated the first 40-nanometer (nm) class DRAM chip and module. This new 1-Gigabit DDR2 component (x8) and a corresponding 1-Gigabyte 800Mbps (Megabits per ...
Hardware
Feb 5, 2009
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Samsung Electronics announced today that it has made a significant advancement in the push for higher volume memory chips by developing the world’s first four gigabit (Gb) DDR3 DRAM chip, using 50 nanometer process technology.
Hardware
Jan 30, 2009
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A fire at a giant Chinese factory making almost one sixth of the world's supply of a key high-tech component shows how vulnerable global manufacturing chains can be to an unexpected event, analysts say.
Business
Sep 12, 2013
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Elpida Memory today announced that it has begun sample shipments of the industry's first DDR3 SDRAM (x32-bit I/O configuration) made using TSV (Through Silicon Via) stacking technology. The sample is a low-power 8-gigabit ...
Electronics & Semiconductors
Jun 28, 2011
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Samsung Electronics today announced the development of an eight gigabyte registered dual inline memory module based on its advanced Green DDR3 DRAM. The new memory module, which has just been successfully tested by major ...
Electronics & Semiconductors
Dec 8, 2010
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Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced that it had developed a 2-gigabit DDR Mobile RAMTM using a 40nm process. The new Mobile RAM has a chip size of less than ...
Electronics & Semiconductors
May 14, 2010
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