Researchers develop high-performance heterojunction pn diodes

A research team has developed high-performance diamond/ε-Ga2O3 heterojunction pn diodes based on ultrawide bandgap semiconductors, achieving breakdown voltages exceeding 3 kV. This work was published in Nano Letters.

Astronauts face unique visual challenges at lunar south pole

Humans are returning to the moon—this time, to stay. Because our presence will be more permanent, NASA has selected a location that maximizes line-of-sight communication with Earth, solar visibility, and access to water ...

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