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(PhysOrg.com) -- "What you want these days is to have precise control of nanostructures. Using masks and optical techniques, it is possible to control how nanostructures grow for use in practical applications," David Field ...
Toshiba Corporation today announced a cost-effective 32nm CMOS platform technology that offers higher density and improved performance while halving the cost per function from 45nm technology.
A breakthrough discovery at UC San Diego may help aid the semiconductor industry’s quest to squeeze more information on chips to accelerate the performance of electronic devices. So far, the semiconductor industry has been ...
In what should be good news for integrated circuit manufacturers, recent studies by the National Institute of Standards and Technology have helped resolve two important questions about an emerging microcircuit manufacturing ...
AMD, working together with its research partner, IBM, announced it has produced a working test chip utilizing Extreme Ultra-Violet (EUV) lithography for the critical first layer of metal connections across the entire chip. ...
ASML Holding NV and Carl Zeiss SMT today announce that each has signed an agreement with Canon for the global cross-license of patents in their respective fields of semiconductor lithography and optical components, used to ...
Researchers at the University of Illinois have discovered a way to generate light and reduce damage in a leading candidate for next-generation microelectronics lithography. The technique could help pack more power into smaller ...
ASML today announced that it has shipped its first TWINSCAN XT:1900i, the world’s only lithography system capable of imaging features down to 36.5 nanometers (nm) on chips manufactured in volume. Production of the XT:1900i ...
The future of 193 nm immersion (193i) lithography will be driven by the demonstration of a high-index lens material, invention of a third generation immersion fluid, and development of a high-index photoresist, Sematech-sponsored ...
Sematech researchers have successfully used 193 nm immersion technology (193i) at 1.3 numerical aperture (NA) with azimuthal polarization to pattern features narrower than 45 nm half-pitch in multiple orientations simultaneously. ...
