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Jul 5, 2004

Micron Announces Plans to Produce NAND Flash Memory Products

Boise, ID July 5, 2004 – Micron Technology, Inc., today announced plans to produce NAND Flash memory solutions targeting memory cards, USB devices and other mass storage applications. The growing demand for high-performance, ...

Jul 5, 2004

Samsung Electronics Unveils Next-generation Technology Breakthroughs

Samsung Electronics Co., Ltd., a leader in advanced semiconductor technology, presented a wide range of core next-generation technologies at the 2004 Symposia on VLSI Technology and Circuits, being held in Honolulu June 15-19. ...

Jul 2, 2004

Samsung Electronics Introduces the Industry’s Highest Density 8GigaByte DDR DRAM Modules for High-end Servers

Samsung Electronics Co., Ltd., the world leader in advanced semiconductor memory technology, announced the industry’s highest capacity 8-gigabyte ( GB ) DDR DRAM module that consists of seventy-two 1-gigabit ( Gb ) monolithic ...

Jun 30, 2004

Inotera announces the successful pilot run of its 300 mm production facility

Inotera Memories, Inc., a joint venture by Infineon Technologies AG and Nanya Technology Corporation, announced the successful completion of its first pilot lot of 300mm (12-inch) wafers based on 110nm DRAM trench technology. ...

Jun 29, 2004

Applied Materials Launches Breakthrough Single-Wafer High-Current Quantum X Implanter

Applied Materials, Inc. today introduced its breakthrough Applied Quantum(TM) X ion implanter, a single-wafer high-current system that enables transistor scaling to the 65nm node and beyond. The Quantum X system's high tilt ...

Jun 28, 2004

Elpida Memory Develops Two New High-Speed DRAM Technologies Designed to Increase IT Infrastructure Performance

DRAM Speed as Fast as SRAM and DDR1/DDR2 SDRAM Produced on a Single 1 Gigabit Chip TOKYO, June 28, 2004 - Elpida Memory, Inc (Elpida), Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced ...

Jun 23, 2004

Infineon Presents Cutting Edge Research Results in Non-Volatile Memory Technologies

Munich, Germany – June 22, 2004 – Infineon Technologies is leading in the development of new non-volatile memory technologies. At the 2004 Symposia on VLSI Technologies and Circuits, June 15 - 19 in Honolulu, Hawaii, ...

Jun 23, 2004

Combination of SRAM and DRAM Capacitor Technology Enables Error-Free Low-Power-Consumption SRAM

Renesas Technology Corp. has developed the industry's first SRAM virtually free of soft errors, dubbed "superSRAM", through the development a new type of memory cell combining an SRAM cell with a DRAM capacitor technology. ...

Jun 22, 2004

Industry's first 2GB SO-DIMM for high performance server and notebook applications

Hynix Semiconductor Inc. today announced availability of its 1Gb based DDR2 4GB Registered Dual In-line Memory Module (RDIMM) and the industry's first 2GB SO-DIMM for high performance server and notebook applications. The ...

Jun 22, 2004

New Computer Revolution is Around the Corner - the World's First 16-Mbit Magnetic RAM Prototype

Munich, Germany – June 22, 2004 – Computers that don’t loose their data, even when the power supply fails; laptops with batteries that supply power for days without the need for recharging; handheld computers and cell ...

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