Scientists from the University of Lisbon (Portugal) and the University of Stuttgart (Germany) have managed to synthesize and extensively characterize a series of cobalt molecules that exhibit the properties of molecular magnets, ...
Non-volatile memories—which are able to retain information even when power is removed—are largely employed in computers, tablets, pen drives and many other electronic devices. Among the various existing technologies, magnetoresistive ...
Scientists from the University of Tsukuba demonstrated how ultrafast spectroscopy can be used to improve the temporal resolution of quantum sensors. By measuring the orientation of coherent spins inside a diamond lattice, ...
Information in computers is transmitted through semiconductors by the movement of electrons and stored in the direction of the electron spin in magnetic materials. To shrink devices while improving their performance—a goal ...
Researchers at Northeastern have discovered a new quantum phenomenon in a specific class of materials, called antiferromagnetic insulators, that could yield new ways of powering "spintronic" and other technological devices ...
A group of researchers from Pisa, Jyväskylä, San Sebastian and MIT have demonstrated how a heterostructure consisting of superconductors and magnets can be used to create unidirectional current like that found in semiconductor ...
An intermediate layer consisting of a few atoms is helping to improve the transport of spin currents from one material to another. Until now, this process involves significant losses. A team from Martin Luther University ...
In one single nanotrack, a research team has achieved the annihilation, fusion and shunting of two skyrmions with opposite chirality via local reversal of the DMI, as well as the pinning effect of energy barriers on skyrmions.
A team led by City College of New York physicist Lia Krusin-Elbaum is behind research that could open a breadth of new quantum device platforms for harnessing emergent topological states for nano-spintronics and fault-tolerant ...
Magnetic random-access memory (MRAM) technology offers substantial potential towards next-generation universal memory architecture. However, state-of-the-art MRAMs are still fundamentally constrained by a sub-nanosecond speed ...
