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General Physics May 18, 2016

Researchers design six-state magnetic memory

(Phys.org)—Computers are often described with "ones and zeros," referring to their binary nature: each memory element stores data in two states. But there is no fundamental reason why there should be just two. In a new ...

Electronics & Semiconductors Mar 11, 2014

Samsung mass producing advanced 4Gb DDR3, using 20 nanometer process technology

Samsung Electronics today announced that it is mass producing the most advanced DDR3 memory, based on a new 20 nanometer process technology, for use in a wide range of computing applications.

Nanophysics Jul 9, 2013

Silicon oxide memories transcend a hurdle

A Rice University laboratory pioneering memory devices that use cheap, plentiful silicon oxide to store data has pushed them a step further with chips that show the technology's practicality.

Nanomaterials Oct 2, 2012

Reliable 3-D memories from silicon oxide and graphene: Visionary transparent memory a step closer to reality

(Phys.org)—Researchers at Rice University are designing transparent, two-terminal, three-dimensional computer memories on flexible sheets that show promise for electronics and sophisticated heads-up displays.

Nanophysics Sep 27, 2011

New 'FeTRAM' is promising computer memory technology

(PhysOrg.com) -- Researchers are developing a new type of computer memory that could be faster than the existing commercial memory and use far less power than flash memory devices.

Nanophysics May 19, 2011

'Nanowire' measurements could improve computer memory

(PhysOrg.com) -- A recent study at the National Institute of Standards and Technology may have revealed the optimal characteristics for a new type of computer memory now under development. The work, performed in collaboration ...

Electronics & Semiconductors Nov 15, 2007

Remembering the future

As electronics designers cram more and more components onto each chip, current technologies for making random-access memory (RAM) are running out of room. European researchers have a strong position in a new technology known ...

Feb 21, 2005

New SanDisk’s High-Performance Ultra II Product With Built-In USB Connectivity

SanDisk® Corporation introduced the SanDisk Ultra™ II SD™ PLUS, an innovative SD flash memory card with built-in USB connectivity. The new card, which works seamlessly in any SD card slot, also can be used as a high-speed ...

Electronics & Semiconductors Jun 15, 2007

Samsung Opens Largest Wafer Plant In Austin, Texas

Samsung Electronics announced the opening of the largest 300mm NAND flash memory wafer plant in Austin, Texas on Thursday, in ceremonies that included Texas Governor Rick Perry and Samsung Electronics Vice Chairman & CEO ...

Aug 3, 2004

SST Offers the Industry’s Highest Performance Controller in the Smallest Package

SST (Silicon Storage Technology, Inc.), a leader in flash memory technology, today announced a new family of ATA Flash Disk Controllers, providing customers with the industry’s highest-performance standalone controller. ...

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