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Condensed Matter Dec 14, 2010

Iridium is attractive for improving flash memory chips

One of the rarest metals on Earth may be an excellent option for enabling future flash memory chips to continue to increase in speed and density, according to a group of researchers in Taiwan.

Hardware Jun 17, 2010

Toshiba Launches 128GB Embedded NAND Flash Memory Module

(PhysOrg.com) -- Toshiba announced today the first ever 128GB embedded flash memory chip using 32 nanometer processes. The entire design is less than 0.06 inches thick.

Electronics & Semiconductors Jul 22, 2009

Beyond flash -- memories are made of this

(PhysOrg.com) -- The race is on for a successor to the popular 'flash' memory used in portable devices. European researchers think they have found a candidate in novel materials combined with a simple, easily fabricated 'crossbar' ...

Electronics & Semiconductors Apr 24, 2014

Toshiba starts mass production of world's first 15nm NAND flash memories

Toshiba Corporation today announced that it has developed the world's first 15-nanometer (nm) process technology, which will apply to 2-bit-per-cell 128-gigabit (16 gigabytes) NAND flash memories. Mass production with the ...

Electronics & Semiconductors Dec 2, 2012

Taiwan engineers defeat limits of flash memory

(Phys.org)—Taiwan-based Macronix has found a solution for a weakness in flash memory fadeout. A limitation of flash memory is simply that eventually it cannot be used; the more cells in the memory chips are erased, the ...

Electronics & Semiconductors Jan 24, 2012

Elpida Memory develops resistance RAM prototype

Elpida Memory, the world's third largest Dynamic Random Access Memory ("DRAM") manufacturer, today announced the development of its first-ever high-speed non-volatile resistance memory (ReRAM) prototype. As the ReRAM prototype ...

General Physics Nov 17, 2011

Scientists watch a next-generation ferroelectric memory bit switch in real time

For the first time, engineering researchers have been able to watch in real time the nanoscale process of a ferroelectric memory bit switching between the 0 and 1 states.

Electronics & Semiconductors Dec 5, 2016

In-memory de-duplication technology to accelerate response for large-scale storage

Fujitsu Laboratories today announced the development of a high-speed in-memory data deduplication technology for all-flash arrays, which are large-scale, high-speed storage systems and use multiple flash devices such as solid-state ...

Oct 4, 2004

Tungsten T5: Industry's First 256MB Storage Handheld

Nearly doubling the industry's current handheld storage maximum, palmOne, Inc. today introduced the Tungsten(TM) T5 handheld with 256MB of flash memory. The Tungsten T5 gives productivity-minded mobile professionals the ...

Quantum Physics Jun 16, 2020

Combining magnetic data storage and logic

Computers normally store and process data in separate modules. But now researchers at ETH Zurich and the Paul Scherrer Institute have developed a method that allows logical operations to be performed directly within a memory ...

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