Nov 2, 2005
Broadband faces watershed year in 2006
Broadband wireless technology should flourish in 2006, a research group said Wednesday.
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Oct 27, 2005
Intel, Motorola push IEEE WiMax standards
Industry heavyweights Intel and Motorola joined forces to advance WiMax technology based on proposed uniform broadband access standards known as IEEE 802.16e.
Oct 26, 2005
A new way to build 3G - Nokia launches new WCDMA base station
Nokia today launched the Nokia Flexi WCDMA Base Station. Based on a completely new platform, the high capacity Nokia Flexi WCDMA Base Station is an innovation enabling operators to make more efficient use of their base station ...
Oct 18, 2005
Nokia WiMAX plans move forward with successful data call
Nokia announced today that its Networks business group has completed a data call as part of its WiMAX (802.16e) development program.
Oct 12, 2005
Vidcasting market set to grow
The next Internet revolution may just begin at home on an almost non-existent budget. Over the past year, vidcasting, or video-on-demand broadcasts, have gained popularity across the Internet and are poised to become the ...
Sep 30, 2005
Wireless World: Standards of the future
The future of wireless network standards -- conventions that will gird the next generation of technologies for business mobility -- is being debated by industry leaders, and new mobile communications devices may be available ...
Sep 22, 2005
Intel launches WiMax push in SE Asia
Intel has launched a campaign to bolster the growth of WiMax in Southeast Asia by offering consulting and other technical expertise.
Sep 10, 2005
India WiMax research center opens
India's first research center for broadband and WiMax technology was inaugurated Friday in the city of Chennai.
Sep 9, 2005
ADAPTIX to test mobile WiMax in New York
ADAPTIX will conduct testing in New York City next year of a mobile and fixed WiMax system offering service for multiple high-speed applications.
Sep 2, 2005
Infineon unveils low-noise SiGeC transistor
Germany's Infineon Technologies unveiled a silicon-germanium-carbon (SiGeC) process technology for high-performance radio-frequency semiconductor devices.
