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Electronics & Semiconductors Sep 22, 2011

Samsung starts new chip line to boost flash memory

Samsung Electronics, the world's largest memory chip maker, said Thursday it has begun mass production at a new line to raise production of flash memory chips used in tablets and smartphones.

Hardware Aug 10, 2011

'Data motion metric' needed for supercomputer rankings, says SDSC's Snavely

As we enter the era of data-intensive research and supercomputing, the world's top computer systems should not be ranked on calculation speed alone, according to Allan Snavely, associate director of the San Diego Supercomputer ...

Electronics & Semiconductors Jul 12, 2011

Imec demonstrates 3D integrated DRAM-on-logic for low-power mobile applications

Imec and its 3D integration partners have proven the potential of 3D integration of a commercial DRAM chip on top of a logic IC for next-generation low-power mobile applications. Imec’s applied 3D EDA (electronic design ...

Electronics & Semiconductors Jul 12, 2011

Imec achieves breakthroughs in enabling future DRAM and RRAM

In the frame of its research on future memory architectures, imec has made breakthroughs for both DRAM and RRAM memories. For DRAM, MIMcap (metal-insulator-metal capacitor) was established as a clear candidate for 1X DRAM ...

Electronics & Semiconductors Jun 30, 2011

IBM scientists demonstrate computer memory breakthrough

(PhysOrg.com) -- For the first time, scientists at IBM Research have demonstrated that a relatively new memory technology, known as phase-change memory (PCM), can reliably store multiple data bits per cell over extended periods ...

Electronics & Semiconductors Jun 28, 2011

Elpida begins sample shipments of DDR3 SDRAM (x32) based on TSV stacking technology

Elpida Memory today announced that it has begun sample shipments of the industry's first DDR3 SDRAM (x32-bit I/O configuration) made using TSV (Through Silicon Via) stacking technology. The sample is a low-power 8-gigabit ...

Electronics & Semiconductors Jun 22, 2011

Elpida achieves 4-Layer 0.8mm mobile RAM package

Elpida Memory today announced that its researchers have developed the technology to mass manufacture a 0.8mm four-layer DRAM package, the thinnest memory device in the DRAM industry.

Electronics & Semiconductors Jun 15, 2011

Elpida uses high-K metal gate technology to develop 2-gigabit DDR2 mobile RAM

Elpida Memory, Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced the DRAM industry's first-ever use of high-k metal gate (HKMG) technology to develop a 2-gigabit DDR2 Mobile RAM (LPDDR2) ...

Hardware Jun 8, 2011

IBM microprocessors to power the new Wii U system from Nintendo

IBM announced that it will provide the microprocessors that will serve as the heart of the new Wii U system from Nintendo.  Unveiled today at the E3 trade show, Nintendo plans for its new console to hit store shelves ...

Hardware May 31, 2011

Samsung begins mass producing 30nm-class, 32-gigabyte memory modules for green IT systems

Samsung Electronics today announced that it is the first in the industry to start mass producing 32 gigabyte (GB) memory modules, essential for cloud computing and advanced server systems, using 30 nanometer (nm) class four ...

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