Exploring pressure-gated band-edge states of 2D halide perovskites
In semiconductor heterostructures, reconfiguring the band-edge states and modulating their interplay with charge carriers in a continuous manner have been long-standing challenges.
Semiconductors are physical systems whose electrical conductivity lies between that of conductors and insulators and is strongly tunable by temperature, impurity concentration, and external fields. Their behavior is governed by band structure, featuring a finite band gap between valence and conduction bands that enables controlled carrier generation and recombination. Charge transport arises from electrons and holes, with densities modulated via doping, optical excitation, or electrostatic gating. Semiconductor systems support phenomena such as drift, diffusion, and quantum confinement, and they serve as the foundational medium for devices like diodes, transistors, and optoelectronic components through engineered heterostructures, junctions, and nanostructures.
In semiconductor heterostructures, reconfiguring the band-edge states and modulating their interplay with charge carriers in a continuous manner have been long-standing challenges.
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