Development of compact model for tunnel field-effect transistors

Japanese researchers have developed a compact model for circuit simulation to predict the circuit behavior of tunnel field-effect transistors (tunnel FETs). This device-operation model simulates current–voltage characteristics ...

Uh-oh, Intel. Globalfoundries to fast-forward into 14nm

(Phys.org)—Globalfoundries has made an announcement that amounts to a direct challenge to Intel, in the latter's race to get further ahead in the mobile device ecosystem. Both Globalfoundries and Intel will be racing for ...

LG Display will release HD panel for smartphones

(Phys.org) -- LG Display is getting ready to showcase a five-inch smartphone display that turns out to be a full HD LCD panel supporting up to 1080p video, something like having a high-quality TV in your hand. The display ...

More energy efficient transistors through quantum tunneling

(PhysOrg.com) -- Researchers at the University of Notre Dame and Pennsylvania State University have announced breakthroughs in the development of tunneling field effect transistors (TFETs), a semiconductor technology that ...

Transistors promise more powerful logic, more logical power

Broadly speaking, the two major areas of research at MIT’s Microsystems Technology Laboratory (MTL) are electronics — transistors in particular — and microelectromechanical systems, or MEMS — tiny mechanical ...

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