Samsung to build flash memory chip line in China
Samsung Electronics, the world's largest memory chip maker, said Tuesday it would build a new production line in China for flash memory chips used in tablets and smartphones.
Samsung Electronics, the world's largest memory chip maker, said Tuesday it would build a new production line in China for flash memory chips used in tablets and smartphones.
Electronics & Semiconductors
Dec 6, 2011
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Samsung Electronics, the world's largest memory chip maker, said Thursday it has begun mass production at a new line to raise production of flash memory chips used in tablets and smartphones.
Electronics & Semiconductors
Sep 22, 2011
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Samsung Electronics today announced that it has started the industry's first production of a high-performance toggle DDR 2.0 multi-level-cell (MLC) memory chip. The new NAND flash chip features a 64 gigabit (Gb) density, ...
Electronics & Semiconductors
May 13, 2011
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(PhysOrg.com) -- Toshiba Corporation today announced that it has fabricated NAND flash memories with 19nm process technology, the finest level yet achieved. This latest technology advance has already been applied to 2-bit-per-cell ...
Electronics & Semiconductors
Apr 21, 2011
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Toshiba Corporation today announced that it has enhanced its NAND flash portfolio with the introduction of next-generation 24-nanometer (nm) generation "SmartNAN," which integrate robust error management into the NAND package. ...
Electronics & Semiconductors
Apr 6, 2011
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Micron Technology, Inc. today introduced a portfolio of high-capacity flash memory products that will lengthen the life of NAND for years to come. By integrating the error management techniques in the same NAND package, the ...
Electronics & Semiconductors
Dec 2, 2010
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Samsung Electronics announced today the industrys first production of a 3-bit-cell (3bit), 64 gigabit (Gb) NAND flash using 20 nanometer (nm)-class process technology. The highly advanced new chip can be used in high-density ...
Hardware
Oct 13, 2010
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Elpida Memory and Spansion today announced they have created the industry's first charge-trapping 1.8 V, 4-gigabit SLC (Single Level Cell) NAND Flash memory. This NAND memory, based on Spansion's MirrorBit charge-trapping ...
Electronics & Semiconductors
Sep 2, 2010
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(PhysOrg.com) -- Lyric Semiconductor has unveiled a new type of chip that uses probability inputs and outputs instead of the conventional 1's and 0's used in logic chips today. Crunching probabilities is much more applicable ...
Samsung Electronics and Toshiba today announced their commitment to development of the most advanced high-performance NAND flash memory technology available today - a double data rate (DDR) NAND flash memory with a 400 megabit-per-second ...
Electronics & Semiconductors
Jul 22, 2010
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