SKoreans demonstrate spin-injected field effect transistor
South Korean scientists said Friday they had demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure.
Nanophysics
Sep 18, 2009
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Page 3 - News tagged with metal oxide semiconductor
Making electric energy efficient at bargain prices
(Phys.org) —So long, kilowatt-hours lost. Hello, energy found.
Energy & Green Tech
Nov 5, 2013
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Nanodot-based memory sets new world speed record
Record speed, low-voltage, and ultra-small size make nanodots a "triple threat" for electronic memory in computers and other electronic devices.
Electronics & Semiconductors
Apr 18, 2012
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Engineers generate world-record mm-wave output power from nanoscale CMOS
(Phys.org) —Harish Krishnaswamy, assistant professor of electrical engineering at Columbia Engineering, has generated a record amount of power output—by a power of five—using silicon-based nanoscale CMOS (complementary ...
Electronics & Semiconductors
Apr 25, 2013
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New material approach should increase solar cell efficiency
(Phys.org) —A University of Illinois research group brought together aspects of condensed matter physics, semiconductor device engineering, and photochemistry to develop a new form of high-performance solar photocatalyst ...
Materials Science
Apr 23, 2013
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A molecular glance on solar water splitting: The hunt for electron holes
Hydrogen production by solar water splitting in photoelectrochemical cells (PEC) has long been considered the holy grail of sustainable energy research. Iron oxide is a promising electrode material. An international team ...
Astronomy
Oct 29, 2012
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Ultra-high-speed optical communications link sets new power efficiency record
Ultrafast supercomputers that operate at speeds 100 times faster than current systems are now one step closer to reality. A team of IBM researchers working on a U.S. Defense Advanced Research Projects Agency (DARPA)-funded ...
Optics & Photonics
Mar 12, 2013
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Nanostructured gate dielectric boosts stability of organic thin-film transistors
A nanostructured gate dielectric may have addressed the most significant obstacle to expanding the use of organic semiconductors for thin-film transistors. The structure, composed of a fluoropolymer layer followed by a nanolaminate ...
Nanophysics
Aug 8, 2018
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'Sandwich chips' combining the best of two technologies
Two Leibniz institutes in Germany broke new technological ground and successfully combined their – up to now separate – technology worlds. Due to their high performance the novel chips developed within the HiTeK project ...
Electronics & Semiconductors
Dec 18, 2012
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New flexible electronics technology may lead to new medical uses
A Wayne State University researcher has developed technology that opens new possibilities for health care and medical applications of electronic devices.
General Physics
Aug 30, 2012
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