A team at the University of California, Riverside Bourns College of Engineering has developed a novel way to build what many see as the next generation memory storage devices for portable electronic devices including smart ...
Electronics & Semiconductors
Aug 14, 2013
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Engineers worldwide have been developing alternative ways to provide greater memory storage capacity on even smaller computer chips. Previous research into two-dimensional atomic sheets for memory storage has failed to uncover ...
Nanophysics
Jan 17, 2018
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Advances by the Rice University lab of James Tour have brought graphite's potential as a mass data storage medium a step closer to reality and created the potential for reprogrammable gate arrays that could bring about a ...
Nanophysics
Sep 9, 2009
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Solid-state memory is seeing an increase in demand due to the emergence of portable devices such as tablet computers and smart phones. Spin-transfer torque magnetoresistive random-access memory (STT-MRAM) is a new type of ...
General Physics
Feb 2, 2012
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Lenovo today announced the IdeaPad S12, the company's first 12-inch netbook. The new netbook brings users the next level in netbook computing with improved usability and performance. Enhancements include a 12.1-inch screen, ...
Hardware
May 26, 2009
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Desirable properties including increased electrical conductivity, improved mechanical properties, or magnetism for memory storage or information processing may be possible because of a theoretical method to control grain ...
Nanomaterials
Oct 20, 2017
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Researchers have demonstrated a new technique that can store more optical data in a smaller space than was previously possible on-chip. This technique improves upon the phase-change optical memory cell, which uses light to ...
Optics & Photonics
Dec 20, 2018
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The storage capacity of hard disk drives could increase by a factor of five thanks to processes developed by chemists and engineers at The University of Texas at Austin.
Polymers
Nov 13, 2012
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Seagate is now shipping the second generation of Momentus XT, its groundbreaking solid state hybrid drive for consumer and commercial laptops and the company’s fastest drive ever for personal computers. With a simple ...
Hardware
Dec 8, 2011
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Samsung Electronics today announced that it has begun mass producing the industry's first 3-bit multi-level-cell (MLC) three-dimensional (3D) Vertical NAND (V-NAND) flash memory, for use in solid state drives (SSDs).
Hardware
Oct 10, 2014
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