Related topics: data storage

Scientists resolve spin puzzle

Scientists at the University of York have helped to uncover the properties of defects in the atomic structure of magnetite, potentially opening the way for its use in producing more powerful electronic devices.

Quick-change materials break the silicon speed limit for computers

(Phys.org) —Faster, smaller, greener computers, capable of processing information up to 1,000 times faster than currently available models, could be made possible by replacing silicon with materials that can switch back ...

A new multi-bit 'spin' for MRAM storage

Interest in magnetic random access memory (MRAM) is escalating, thanks to demand for fast, low-cost, nonvolatile, low-consumption, secure memory devices. MRAM, which relies on manipulating the magnetization of materials for ...

UH chemical engineer makes device fabrication easier

Have you ever wondered how the tiny components and devices inside your cell phone are made? The devices inside your phone and computer, such as integrated circuits, microprocessors and memory chips, are made in a process ...

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