(PhysOrg.com) -- In finally answering an elusive scientific question, researchers with the U.S. Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) have shown that the selective placement of strain ...
Nanophysics
Sep 17, 2009
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A group of researchers from Tohoku University has unveiled a new material that exhibits enormous magnetoresistance, paving the way for developments in non-volatile magnetoresistive memory (MRAM).
Condensed Matter
Jun 9, 2023
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44
If a research team in Japan gets its wish, "normally off" computers may one day soon be replacing present computers in a move that would both eliminate volatile memory, which requires power to maintain stored data, and reduce ...
General Physics
Apr 8, 2014
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A team of scientists at Rutgers University has found a material in which an electric field can control the overall magnetic properties of the material. If the magnetoelectric effect discovered by the Rutgers group can be ...
General Physics
Aug 23, 2010
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More than 150 years ago, William Thomson, later Lord Kelvin, discovered the magnetoresistive effect. Today, this finding enables sensors to measure the rotational speed of a car wheel, and is also used in compass navigation ...
General Physics
Jun 16, 2015
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68
While electrons are well known to carry both charge and spin, only the electric charge portion is used as an information carrier in modern electronic devices. However, the limits of modern electronics and the impending end ...
Condensed Matter
Nov 24, 2021
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66
In a paper published in Nature this week (April 13, 2023), researchers from The University of Manchester report record-high magnetoresistance that appears in graphene under ambient conditions.
Condensed Matter
Apr 12, 2023
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62
In a paper appearing in Nature's Scientific Reports, Dr. Ramesh Mani, professor of physics and astronomy at Georgia State University, reports that a giant magnetoresistance effect depends on the physical size of the device ...
Condensed Matter
Oct 15, 2013
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South Korea's Hynix Semiconductor and Japanese electronics giant Toshiba said Wednesday they have agreed to jointly develop a next-generation memory device.
Electronics & Semiconductors
Jul 13, 2011
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0
(Phys.org) —New research revealing the interactions between electrons and organic carrier materials in devices that use electron spin to encode information could help in the development of faster and more efficient data ...
General Physics
Mar 25, 2013
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