Next generation devices get boost from graphene research
(PhysOrg.com) -- Researchers in the Electro-Optics Center (EOC) Materials Division at Penn State have produced 100 mm diameter graphene wafers, a key milestone in the development of graphene for next generation ...
Researchers speed up transistors by embedding tunneling field-effect transistor
Carbon Based Chips May One Day Replace Silicon Transistors
CNT wrap-gate transistors could extend transistor performance scaling
Sensor Detects Onset of Acute Myocardial Ischemia
(PhysOrg.com) -- Engineering researchers at the University of Arkansas have fabricated and tested a unique biosensor that measures concentrations of potassium and hydrogen ions in the human heart with high specificity. The ...
Light control technique could lead to tunable lighting and displays
An organic transistor paves the way for new generations of neuro-inspired computers
For the first time, French researchers at CNRS and CEA have developed a transistor that can mimic the main functionalities of a synapse.
More energy efficient transistors through quantum tunneling
(PhysOrg.com) -- Researchers at the University of Notre Dame and Pennsylvania State University have announced breakthroughs in the development of tunneling field effect transistors (TFETs), a semiconductor ...
Tunnel FET having a new architecture with potential for substantial improvement in performance
Researchers from the National Institute of Advanced Industrial Science and Technology (AIST) have demonstrated the operation of a synthetic electric field tunnel field-effect transistor with a new architecture.
Semiconducting Nanotubes Are 'Holy Grail' for Electronic Applications
(PhysOrg.com) -- After announcing last April a method for growing exceptionally long, straight, numerous and well-aligned carbon cylinders only a few atoms thick, a Duke University-led team of chemists has ...
New nanowire transistors may help keep Moore's Law alive
Toshiba develops essential technology for spintronics-based MOS field-effect transistor
(PhysOrg.com) -- Toshiba Corporation today announced that it has developed MOSFET cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and ...
Two-dimensional atomically-flat transistors show promise for next generation green electronics
Researchers at UC Santa Barbara, in collaboration with University of Notre Dame, have recently demonstrated the highest reported drive current on a transistor made of a monolayer of tungsten diselenide (WSe2), ...
New technique makes it easier to etch semiconductors
Creating semiconductor structures for high-end optoelectronic devices just got easier, thanks to University of Illinois researchers.