(PhysOrg.com) -- Researchers in the Electro-Optics Center (EOC) Materials Division at Penn State have produced 100 mm diameter graphene wafers, a key milestone in the development of graphene for next generation ...
Jan 22, 2010
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(PhysOrg.com) -- A new "transfer-printing" method of making light-sensitive semiconductors could make solar cells, night-vision cameras, and a range of other devices much more efficient, and could transform ...
May 20, 2010
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(PhysOrg.com) -- IBM researchers are hopeful that, over the next decade, silicon-based transistors will be replaced by carbon-based transistors. IBM has already laid out the ground work for carbon-based transistors.
Feb 03, 2010
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(Phys.org) —Two French researchers, Guilhem Larrieu and Xiang‑Lei Han, may have succeeded in possibly setting back the date to which Moore's Law would no longer apply by creating a new kind of nanowire ...
May 02, 2013
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An international team of researchers featuring Texas A&M University physicist Jairo Sinova has announced a breakthrough that gives a new spin to semiconductor nanoelectronics and the world of information technology.
Dec 23, 2010
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For the first time, French researchers at CNRS and CEA have developed a transistor that can mimic the main functionalities of a synapse.
Jan 22, 2010
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(PhysOrg.com) -- Toshiba Corporation today announced that it has developed MOSFET cell based on spin transport electronics, or spintronics, an advanced semiconductor technology that makes use of the spin and ...
Dec 09, 2009
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Researchers at Wake Forest University's Organic Electronics group have come up with a novel solution to one of the biggest technological barriers facing the organic semiconductor industry today. Oana Jurchescu, an assistant ...
Apr 25, 2013
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Swiss researchers have built a transistor whose crucial element is a carbon nano-tube, suspended between two contacts, with outstanding electronic properties. A novel fabrication approach allowed the scientists ...
Jul 21, 2010
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(Phys.org)—Researchers at Rochester Institute of Technology, international semiconductor consortium SEMATECH and Texas State University have demonstrated that use of new methods and materials for building integrated circuits ...
Jan 30, 2013
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(PhysOrg.com) -- Electronic gadgetry gets tinier and more powerful all the time, but at some point, the transistors and myriad other component parts will get so little they won't work. That's because when ...
Aug 13, 2009
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(PhysOrg.com) -- After announcing last April a method for growing exceptionally long, straight, numerous and well-aligned carbon cylinders only a few atoms thick, a Duke University-led team of chemists has ...
Jan 21, 2009
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(PhysOrg.com) -- Over the past several years, organic light-emitting diodes (OLEDs) have become a popular light source due to their advantages including bright displays, wide viewing angles, and the ability ...
Jan 11, 2012
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(PhysOrg.com) -- Researchers at the University of Notre Dame and Pennsylvania State University have announced breakthroughs in the development of tunneling field effect transistors (TFETs), a semiconductor ...
Mar 26, 2012
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South Korean scientists said Friday they had demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure.
Sep 18, 2009
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