Just as magnetic materials have opposing North and South poles, ferroelectric materials have opposing positive charges and negative charges that exhibit measurable differences in electric potential. Researchers at MIT and ...
Condensed Matter
Jul 15, 2016
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971
Ferroelectric materials have applications in next-generation electronics devices from optoelectronic modulators and random access memory to piezoelectric transducers and tunnel junctions. Now researchers at Tokyo Institute ...
Nanophysics
Aug 3, 2015
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707
The improvements in random access memory that have driven many advances of the digital age owe much to the innovative application of physics and chemistry at the atomic scale.
General Physics
Nov 24, 2014
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0
Fujitsu Semiconductor today announced the addition of new small package to the MB85RC16, the 16kbit ultra low-power Ferroelectric Random Access Memory (FRAM) device with an I2C interface.
Electronics & Semiconductors
Nov 27, 2012
1
0
Fujitsu Semiconductor America (FSA) today extended its growing portfolio of Ferroelectric memory products with the introduction of a new Ferroelectric Random Access Memory (FRAM) product series that features a wide voltage ...
Electronics & Semiconductors
Mar 5, 2012
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0
Fujitsu Semiconductor Europe today introduces a new FRAM (Ferroelectric Random Access Memory) product series with an extended voltage range of 3.0V – 5.5V, offering significantly greater design flexibility for customers ...
Electronics & Semiconductors
Feb 14, 2012
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0
For the first time, engineering researchers have been able to watch in real time the nanoscale process of a ferroelectric memory bit switching between the 0 and 1 states.
General Physics
Nov 17, 2011
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0
Toshiba Corporation today announced the prototype of a new FeRAM -- Ferroelectric Random Access Memory -- that redefines industry benchmarks for density and operating speed. The new chip realizes storage of 128-megabits and ...
Electronics & Semiconductors
Feb 9, 2009
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