Fundamental discovery could lead to better memory chips

(PhysOrg.com) -- Engineering researchers at the University of Michigan have found a way to improve the performance of ferroelectric materials, which have the potential to make memory devices with more storage capacity than ...

Scientists develop fatigue-free ferroelectric material

Researchers at the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences, in collaboration with research groups from the University of Electronic Science and Technology of China ...

Discovery of ferroelectricity in an elementary substance

National University of Singapore (NUS) physicists have discovered a novel form of ferroelectricity in a single-element bismuth monolayer that can produce regular and reversible dipole moments for future applications of non-volatile ...

Multilevel polarization switching in ferroelectric thin films

Ferroelectric materials have found widespread use in everyday technology mainly owing to their electric polarization that can be switched between two distinct states. Overcoming the binary limit of ferroelectrics in order ...

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