NEC's Breakthrough to Enhance Functionality of Sub-10nm Transistors

Dec 05, 2005

NEC today announced the development of new breakthrough device technology for low-power, high performance system LSI. Based on the ultimate scaling of conventional bulk planar MOSFETs, the new technology is capable of improving on-off ratio, enhancing the functionality of sub-10nm planar bulk transistors.

The new device technology has been enabled by the following advancements:

(1) A new elevated source/drain extension (SDE) structure was created through a silicon selective-epitaxial growth technique, enabling a decrease in junction depth to an effective level and an improvement in turn-off characteristics. The thicker, elevated SDE region realizes a reduction in parasitic resistance and an enhancement in on-current. (The silicon surface for the source/drain doping region was raised with respect to the channel region surface.)

(2) By applying a tunneling epitaxial growth technique to the gap region, created by a selective etching technique, between the silicon-surface and sidewall-material, the thickness of the elevated SDE can be self-aligned and easily controlled. This realizes a reduction in fluctuation of elevation thickness, and improved productivity through ease of manufacturing.

This technology can also be used in realizing low power, high performance system LSI for the 45nm technology generation and beyond in the future.

Although silicon devices have been achieving higher performance and increasingly larger-scaled integration through scaling of dimension size, in recent years it has been predicted that their operation principles are nearing physical limits. NEC decided to test these limits in 2003 when it successfully fabricated planar bulk transistors, whose functionality was proven to be valid for 5nm gate-length devices.

However, at that time, actual operation characteristics, i.e. on-off ratio, were not of a sufficiently high standard owing to the trade-off between the on-current and aggressive scaling, as it is necessary to make source/drain junctions shallower to ensure steady operation with dimensional scaling, and a shallower diffusion layer is more resistive to electrical conduction.

NEC's newly developed device technology has successfully solved this issue. The new technique simultaneously achieves controlled elevation of the source/drain region and a significant improvement in the on-off ratio, even for sub-10nm planar bulk transistors. Its potential was shown by actual test-fabrication carried out by NEC on the world's smallest 6nm transistors. Contrary to hypothesis that the ultimately-scaled transistor structure should have a very specific structure on a specific substrate such as the ultra-thin body SOI (silicon-on-insulator) or double-gate structure, this new research development proves the potential for continuous and further technological advancement of system-on-silicon LSI until 2020 through highly reliable, low-cost planar bulk technology.

This new breakthrough technology has provided NEC with a strong direction for future technological progress and transistor development, and it will continue to carry out aggressive R&D in this field toward the realization of next generation low-power, high-speed system LSI.

The results of this research will be announced at the international electron devices meeting (IEDM) being held in Washington D.C., U.S.A from December 5 -7, 2005.

Source: NEC

Explore further: UPS says 51 retail stores breached by malware

add to favorites email to friend print save as pdf

Related Stories

Designing exascale computers

Jul 23, 2014

"Imagine a heart surgeon operating to repair a blocked coronary artery. Someday soon, the surgeon might run a detailed computer simulation of blood flowing through the patient's arteries, showing how millions ...

Black hole fireworks in nearby galaxy

Jul 03, 2014

(Phys.org) —Celebrants this Fourth of July will enjoy the dazzling lights and booming shock waves from the explosions of fireworks. A similarly styled event is taking place in the galaxy Messier 106, as ...

Classical monographs re-published in advanced open access

Jun 11, 2014

Easy access to legacy data collected over hundreds-of-years of exploration of nature from the convenience of people's own computers for anyone all over the world? It may sound futuristic but a brand new pilot ...

Funky ferroelectric properties probed with X-rays

Jun 10, 2014

Ferroelectric materials like barium titanate, a ceramic used in capacitors, are essential to many electronic devices. Typical ferroelectric materials develop features called domain walls with unusual properties ...

Neutron beams reveal how antibodies cluster in solution

May 19, 2014

Scientists have used small-angle neutron scattering (SANS) and neutron spin-echo (NSE) techniques for the first time to understand how monoclonal antibodies (mAbs), a class of targeted biopharmaceuticals ...

Recommended for you

The ethics of driverless cars

1 hour ago

Jason Millar, a PhD Candidate in the Department of Philosophy, spends a lot of time thinking about driverless cars. Though you aren't likely to be able to buy them for 10 years, he says there are a number ...

We need new laws to govern cyberwarfare

2 hours ago

President Bush is reported to have said: "When I take action, I'm not going to fire a US$2m missile at a US$10 empty tent and hit a camel in the butt. It's going to be decisive." As the quote suggests, when ...

Ticketfly buying WillCall for on-premise data

3 hours ago

Ticketfly Inc., a San Francisco-based technology company among several posing a challenge to Ticketmaster, is acquiring WillCall Inc., a crosstown rival that turns your smartphone into a mobile wallet at live events.

Voice, image give clues in hunt for Foley's killer

3 hours ago

Police and intelligence services are using image analysis and voice-recognition software, studying social media postings and seeking human tips as they scramble to identify the militant recorded on a video ...

User comments : 0