NEC Unveils 90-Nanometer Embedded DRAM Technology

Mar 07, 2005
NEC Electronics Unveils 90-Nanometer Embedded DRAM Technology

New ZrO2 Dielectric Material Increases Performance of CMOS-Compatible Embedded DRAM

NEC Electronics Corporation today announced its new metal insulator metal (MIM) technology for 90 nanometer embedded DRAM (eDRAM), called MIM2. In addition, to meet the technical challenges presented by moving the company's established CMOS-compatible eDRAM technology to a 90 nm process, NEC Electronics, ahead of other vendors, has adopted the use of zirconium oxide (ZrO2), a new dielectric material with a higher-k factor that allows the embedded DRAM's smaller bit cells to retain storage capacitance. With this new ZrO2 technology, NEC Electronics, a leader and pioneer of CMOS-compatible eDRAM, is well positioned to move its eDRAM technology to even smaller process geometries as it evolves.

The new dielectric material and MIM2 technology enable NEC Electronics to deliver robust eDRAM solutions with smaller cell sizes and higher memory integration, ample storage capacitance and lower cell heights, all the while maintaining the merits of existing eDRAM technology, such as CMOS-compatibility, low power and high-speed random access to the eDRAM.

"We are proud that we have successfully completed 90 nm eDRAM qualification of our leading-edge MIM2 technology that offers our customers some truly compelling improvements in power consumption and performance, while enabling reduced die sizes," said Takaaki Kuwata, general manager, Advanced Device Development Division, NEC Electronics Corporation. "Following our great success in implementing ZrO2 technology at the 90 nm node, we will apply this technology to our future 65 nm and 45 nm eDRAM offerings."

NEC Electronics' eDRAM technology provides a wide range of macro variants, ranging from the high performance to the low power consumption required by a variety of applications, including high-end networking devices and consumer electronics products such as cell phones, mobile handheld devices and gaming/entertainment devices. The full macro lineup for NEC Electronics' 90 nm ASIC series, CB-90, is scheduled to be ready by September 2005.

Explore further: Germany's Bayer says will float chemicals division

add to favorites email to friend print save as pdf

Related Stories

IBM Reveals Breakthrough eDRAM Memory Technology

Feb 14, 2007

In papers presented at the International Solid State Circuits Conference, IBM revealed a first-of-its-kind, on-chip memory technology that features the fastest access times ever recorded in eDRAM (Embedded ...

Recommended for you

Indie game developers sprouting at Tokyo Game Show

24 minutes ago

Nestled among the industry giants at the Tokyo Game Show Thursday are a growing number of small and independent games developers from Asia and Europe, all hoping they are sitting on the next Minecraft.

Review: Ambitious 'Destiny' lacks imagination

54 minutes ago

Midway through "Destiny," the new science fiction epic from "Halo" creators Bungie, a smug prince is musing on the hero's desire to visit a mysterious site on Mars.

News Corp opposes Google in EU antitrust case

54 minutes ago

The media conglomerate controlled by Rupert Murdoch is joining the fray in Google's protracted European antitrust case, saying the technology company unfairly distorts competition.

User comments : 0