Soitec, ATDF to Develop Multi-Gate Field Effect Transistors (MuGFETs) for 45-nm Technology and Beyond

Jan 05, 2005

In an effort to accelerate the development of new-generation transistors, Soitec, today announced its participation as the SOI substrate supplier in a development program led by ATDF -- Advanced Technology Development Facility -- the new independent subsidiary of SEMATECH for advanced semiconductor research and development. Together with two leading semiconductor manufacturers and a number of equipment suppliers and U.S.-based universities, Soitec has been involved for over a year in this advanced R&D program at ATDF, which specializes in services involving technology development, wafer processing, and analytical and electrical testing. The ATDF development program focuses on multi-gate field effect transistor (MuGFET) technology for the 45-nm node and below. MuGFET is a generic term used to describe a variety of new, multiple-gate field effect transistors, including CMOS FinFETs (FETs with "fin-shaped" transistors) and triple-gate devices.

Throughout ATDF's MuGFET program, Soitec has already supplied its SOI engineered substrates for the verification process of a 45-nm node MuGFET test chip using 248-nm lithography, which resulted in a functional, tri-gate device. In addition, Soitec is also providing SOI substrates for the development of a working FinFET transistor processed with 193-nm lithography.

The MuGFET project is one of the emerging technology development programs that ATDF has undertaken to accelerate its customers' development progress from research to manufacturing. This partnership was ATDF's first customer- funded development program for a SOI-based device, positioning ATDF on the fast-track to ramping up its development expertise in the SOI arena. Compared to classical CMOS devices, MuGFET is a new, non-planar CMOS transistor architecture, providing the industry with an alternative design solution for keeping pace with Moore's Law and the requirements set forth by the International Technology Roadmap for Semiconductors (ITRS 2003, Emerging Research Devices). In order to improve device performance and minimize current leakage when transistors are off, semiconductor manufacturers are beginning to examine innovative transistor structures that may come into play at technology nodes at 32 nm and below. If manufacturability is proven, MuGFETs could be introduced into manufacturing within several years, and could eventually replace conventional CMOS transistors.

This new technology development effort goes beyond bulk silicon and relies heavily on the use of high quality, very thin SOI wafers as a starting material. As part of the customer program, Soitec is chartered with providing both its advanced substrates and technical support. The company's strained SOI wafers may also be considered as another substrate for future evaluation as part of this ongoing program.

"ATDF is pleased to have Soitec as a customer for one of its MuGFET emerging technology programs. Our MuGFET program would not have been able to meet its aggressive technical milestones without significant expertise in engineered substrates," said Dave Lewis, director of technology for ATDF.

"We are very pleased to work with ATDF, and leading chip and equipment makers throughout the supply chain, to provide the industry with new solutions for future technology nodes -- 45 nm and beyond -- based on our SOI technology," noted Pascal Mauberger, chief operating officer (COO) of Soitec. "Such collaborative efforts are becoming increasingly reliant on the use of engineered substrates due to their performance benefits over bulk silicon. This is an excellent example of how the global supply-chain needs to work together in order to sustain Moore's Law as we continue to move toward smaller device geometries."

Explore further: Growing app industry has developers racing to keep up

add to favorites email to friend print save as pdf

Related Stories

IMEC to create solutions for sub-45nm CMOS scaling

Jun 17, 2005

Together with its CMOS core partners, IMEC will announce several research breakthroughs on new gate-stack technologies and multiple-gate FET (MuGFET) devices at the 2005 Symposium on VLSI Technology. A combination of advances ...

Recommended for you

Growing app industry has developers racing to keep up

9 minutes ago

Smartphone application developers say they are challenged by the glut of apps as well as the need to update their software to keep up with evolving phone technology, making creative pricing strategies essential to finding ...

Review: With Galaxy S5, Samsung proves less can be more

2 hours ago

Samsung Electronics Co. has produced the most formidable rival yet to the iPhone 5S: the Galaxy S5. The device, released over the weekend, is the fifth edition of the company's successful line of Galaxy S ...

User comments : 0

More news stories

Making graphene in your kitchen

Graphene has been touted as a wonder material—the world's thinnest substance, but super-strong. Now scientists say it is so easy to make you could produce some in your kitchen.

Less-schooled whites lose longevity, study finds

Barbara Gentry slowly shifts her heavy frame out of a chair and uses a walker to move the dozen feet to a chair not far from the pool table at the Buford Senior Center. Her hair is white and a cough sometimes interrupts her ...

Easter morning delivery for space station

Space station astronauts got a special Easter treat: a cargo ship full of supplies. The shipment arrived Sunday morning via the SpaceX company's Dragon cargo capsule.