Memory reformat planned for Opportunity Mars rover

(Phys.org) —An increasing frequency of computer resets on NASA's Mars Exploration Rover Opportunity has prompted the rover team to make plans to reformat the rover's flash memory.

Taiwan engineers defeat limits of flash memory

(Phys.org)—Taiwan-based Macronix has found a solution for a weakness in flash memory fadeout. A limitation of flash memory is simply that eventually it cannot be used; the more cells in the memory chips are erased, the ...

Extremely fast MRAM data storage within reach

Magnetic Random Access Memories (MRAM) are the most important new modules on the market of computer storage devices. Like the well known USB-sticks, they store information into static memory, but MRAM offer short access times ...

Scientists develop fatigue-free ferroelectric material

Researchers at the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences, in collaboration with research groups from the University of Electronic Science and Technology of China ...

New material opens the door for energy-efficient computing

Over the last decade, with the introduction of increasingly complex artificial intelligence (AI) technologies, the demand for computing power has risen exponentially. New, energy-efficient hardware designs could help meet ...

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