How is it possible to create computer memory that is both faster and consumes less energy? Researchers at the Institut d'électronique fondamentale (CNRS/Université Paris-Sud) and CEA-List have unlocked the physical mechanisms ...
Computer Sciences
Apr 28, 2015
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91
Fujitsu Semiconductor announced that it has developed the world's first technology to produce chips with embedded flash memory on logic circuits fabricated using deeply depleted channel (DDCTM) technology, with the 55nm process ...
Electronics & Semiconductors
Dec 10, 2013
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(Phys.org) —An increasing frequency of computer resets on NASA's Mars Exploration Rover Opportunity has prompted the rover team to make plans to reformat the rover's flash memory.
Space Exploration
Sep 1, 2014
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(Phys.org) -- Memory devices for computers require a large collection of components that can switch between two states, which represent the 1's and 0's of binary language. Engineers hope to make next-generation chips with ...
Condensed Matter
Jun 21, 2012
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A team of researchers from Center for Biomedical Technology (CTB) at Universidad Politécnica de Madrid (UPM) has developed a pocket instrument capable of perceiving radio signals from 50 MHz to 6 GHz and storing this information ...
Telecom
May 4, 2016
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The ever growing complexity of various simulation tasks not only require a continuous increase of computing power but also the capability of managing large amounts of data. Realisation of an active storage architecture and ...
Computer Sciences
Nov 18, 2013
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0
Toshiba Corporation today announced that it has enhanced its NAND flash portfolio with the introduction of next-generation 24-nanometer (nm) generation "SmartNAN," which integrate robust error management into the NAND package. ...
Electronics & Semiconductors
Apr 6, 2011
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Computers often do not run as fast as they should because they are constantly transferring information between two kinds of memory: a fast, volatile memory connected to the CPU, and a slow, non-volatile memory that remembers ...
Condensed Matter
Aug 2, 2012
4
0
Scientists from MIPT have succeeded in growing ultra-thin (2.5-nanometre) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions. ...
Condensed Matter
Apr 14, 2016
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11
Scientists from the University of Lisbon (Portugal) and the University of Stuttgart (Germany) have managed to synthesize and extensively characterize a series of cobalt molecules that exhibit the properties of molecular magnets, ...
Analytical Chemistry
Jul 5, 2022
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