IBM scientists demonstrate computer memory breakthrough

(PhysOrg.com) -- For the first time, scientists at IBM Research have demonstrated that a relatively new memory technology, known as phase-change memory (PCM), can reliably store multiple data bits per cell over extended periods ...

Toshiba introduces new embedded-NAND flash memory in 24nm process

Toshiba Corporation today announced that it has enhanced its NAND flash portfolio with the introduction of next-generation 24-nanometer (nm) generation "SmartNAN," which integrate robust error management into the NAND package. ...

Extremely fast MRAM data storage within reach

Magnetic Random Access Memories (MRAM) are the most important new modules on the market of computer storage devices. Like the well known USB-sticks, they store information into static memory, but MRAM offer short access times ...

Beyond flash -- memories are made of this

(PhysOrg.com) -- The race is on for a successor to the popular 'flash' memory used in portable devices. European researchers think they have found a candidate in novel materials combined with a simple, easily fabricated 'crossbar' ...

page 4 from 4