Under the microscope #7
In this video Dr Ingrid Graz shows us a thin layer of gold on top of rubber. Cracks in the gold allow it to stretch and we can use this for stretchable electronics.
In this video Dr Ingrid Graz shows us a thin layer of gold on top of rubber. Cracks in the gold allow it to stretch and we can use this for stretchable electronics.
Other
Feb 10, 2012
0
0
A research group at the NIMS International Center for Materials Nanoarchitectonics (MANA) has proved that the electrical resistance of a metal single atomic layer on a silicon surface becomes zero by superconductivity.
Superconductivity
Nov 24, 2011
8
0
Imagine having skin so supple you could stretch it out to more than twice its normal length in any direction - repeatedly - yet it would always snap back completely wrinkle-free when you let go of it. You would certainly ...
Nanophysics
Oct 24, 2011
5
0
Scientists from the Georgia Institute of Technology have for the first time provided details of their "confinement controlled sublimation" technique for growing high-quality layers of epitaxial graphene on silicon carbide ...
Nanomaterials
Sep 22, 2011
0
0
(PhysOrg.com) -- A technique that uses hydrogen to improve transistor performance on real-world graphene devices has been demonstrated on the wafer-scale by researchers in Penn States Electro-Optics Center (EOC). In ...
Nanomaterials
Sep 5, 2011
3
0
French researchers have succeeded in creating a conductive layer on the surface of strontium titanate (SrTiO3), a transparent insulating material considered to be very promising for the development of future microelectronics ...
Nanomaterials
Jan 18, 2011
0
0
Researchers from TU Delft in the Netherlands have shown how the energy yield of relatively cheap solar panels, made of amorphous silicon, can be considerably raised: from around 7 percent to 9 percent.
Energy & Green Tech
Jul 6, 2010
0
0
A team of nanotechnology researchers from the University of Pennsylvania and Columbia University has used friction force microscopy to determine the nanoscale frictional characteristics of four atomically-thin materials, ...
Nanophysics
Apr 1, 2010
0
0
(PhysOrg.com) -- Toshiba Corporation today announced that it has developed a breakthrough technology for steep channel impurity distribution that delivers a solution to a key problem for 20nm generation CMOS technology. The ...
Electronics & Semiconductors
Dec 9, 2009
0
0
(PhysOrg.com) -- Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create faster ...
Electronics & Semiconductors
Nov 10, 2009
3
1