At this week's IEEE International Electron Devices Meeting (IEDM 2012), imec addressed key challenges of scaling beyond silicon-channel finFETs. Imec showed that channel mobility can be boosted by growing non-Si channels ...
Electronics & Semiconductors
Dec 12, 2012
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Imec, the Belgian nanoelectronics research center, and Synopsys, Inc., a global leader accelerating innovation in the design, verification and manufacturing of chips and systems, today announced that they have expanded their ...
Electronics & Semiconductors
Dec 12, 2012
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For the first time, a silicon-based optical fiber with solar-cell capabilities has been developed that has been shown to be scalable to many meters in length. The research opens the door to the possibility of weaving together ...
Materials Science
Dec 6, 2012
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(Phys.org)—A team of interdisciplinary researchers at Rensselaer Polytechnic Institute has developed a new method for significantly increasing the heat transfer rate across two different materials. Results of the team's ...
Nanophysics
Dec 4, 2012
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Fujitsu Semiconductor announced that it achieved high output power of 2.5kW in server power supply units equipped with gallium-nitride (GaN) power devices built on a silicon substrate. Fujitsu Semiconductor aims to start ...
Electronics & Semiconductors
Nov 22, 2012
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Researchers at the National Institute of Advanced Industrial Science and Technology (AIST), have developed a microelectromechanical systems (MEMS) device fabrication technology that uses only printing and injection molding. ...
Engineering
Nov 21, 2012
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MIT researchers find that heat moving in materials called superlattices behaves like waves; finding could enable better thermoelectrics.
Nanomaterials
Nov 15, 2012
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National Institute of Advanced Industrial Science and Technology (AIST) researchers have developed a three-dimensional stress analysis simulator for ultra-small silicon (Si) devices. The developed simulation technology allows ...
Nanophysics
Nov 12, 2012
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Fujitsu Semiconductor today announced that it successfully achieved high output power of 2.5kW in server power supply units equipped with gallium-nitride (GaN) power devices built on a silicon substrate. Fujitsu Semiconductor ...
Electronics & Semiconductors
Nov 8, 2012
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The recently developed ability to measure physical changes in silicon when processed into microelectronic devices could improve fabrication techniques for even smaller circuits.
Electronics & Semiconductors
Nov 7, 2012
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