Fujitsu Semiconductor aims to start production of GaN power devices

Fujitsu Semiconductor today announced that it successfully achieved high output power of 2.5kW in server power supply units equipped with gallium-nitride (GaN) power devices built on a silicon substrate. Fujitsu Semiconductor ...

Semiconductor devices: Under mounting stress

The recently developed ability to measure physical changes in silicon when processed into microelectronic devices could improve fabrication techniques for even smaller circuits.

Wireless charging explained

Wireless charging has been around for a several years now, but it's never really been that good. Until now, that is. The Nokia Lumia 920 and Lumia 820 (with the aid of the recharging shell) are the first Nokia smartphones ...

Uh-oh, Intel. Globalfoundries to fast-forward into 14nm

(Phys.org)—Globalfoundries has made an announcement that amounts to a direct challenge to Intel, in the latter's race to get further ahead in the mobile device ecosystem. Both Globalfoundries and Intel will be racing for ...

A millimeter-scale, wirelessly powered cardiac device

A team of engineers at Stanford has demonstrated the feasibility of a super-small, implantable cardiac device that gets its power not from batteries, but from radio waves transmitted from outside the body. The implanted device ...

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