Taiwan engineers defeat limits of flash memory

(Phys.org)—Taiwan-based Macronix has found a solution for a weakness in flash memory fadeout. A limitation of flash memory is simply that eventually it cannot be used; the more cells in the memory chips are erased, the ...

IBM scientists demonstrate computer memory breakthrough

(PhysOrg.com) -- For the first time, scientists at IBM Research have demonstrated that a relatively new memory technology, known as phase-change memory (PCM), can reliably store multiple data bits per cell over extended periods ...

Toshiba introduces new embedded-NAND flash memory in 24nm process

Toshiba Corporation today announced that it has enhanced its NAND flash portfolio with the introduction of next-generation 24-nanometer (nm) generation "SmartNAN," which integrate robust error management into the NAND package. ...

Beyond flash -- memories are made of this

(PhysOrg.com) -- The race is on for a successor to the popular 'flash' memory used in portable devices. European researchers think they have found a candidate in novel materials combined with a simple, easily fabricated 'crossbar' ...

page 3 from 3