Atomic nitrogen route to new 2-D semiconductors

A simple and non-destructive fabrication technique could aid the manufacture of more energy efficient two-dimensional (2-D) films needed to transform the electronics industry.

A device emerges from the fusion of IGZO and ferroelectric-HfO2

As a part of JST PRESTO program, Associate professor Masaharu Kobayashi, Institute of Industrial Science, the University of Tokyo, has developed a ferroelectric FET (FeFET) with ferroelectric-HfO2 and ultrathin IGZO channel. ...

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