Researchers at Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU) have developed a simple yet accurate method for finding defects in the latest generation of silicon carbide transistors. This will speed up the process ...
General Physics
Jan 11, 2019
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NXP Semiconductors today released its new LFPAK33 portfolio – a range of high switching performance MOSFETs available in an ultra-reliable 3.3-mm x 3.3-mm power package. Unlike many MOSFET packages of this size, LFPAK33 ...
Electronics & Semiconductors
Jun 18, 2012
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(Phys.org) —Researchers from the University of California, Santa Barbara (UCSB) have recently introduced the highest performing III-V metal-oxide semiconductor (MOS) field-effect transistors (FETs) at the 2014 Symposium ...
Electronics & Semiconductors
Jun 12, 2014
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NXP Semiconductors today introduced the industry’s first MOSFETs in a 2-mm x 2-mm low-profile DFN (discrete flat no-leads) package with tin-plated, solderable side pads. These unique side pads offer the advantage of ...
Electronics & Semiconductors
Jun 15, 2012
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Toshiba America Electronic Components (TAEC) today announced that it has expanded its family of low-voltage, high-speed MOSFETs with new, ultra-efficient 60V and 120V devices that will save space and reduce losses in secondary ...
Electronics & Semiconductors
May 10, 2012
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