Samsung Electronics today announced that it has begun mass producing the industry's first 3-bit multi-level-cell (MLC) three-dimensional (3D) Vertical NAND (V-NAND) flash memory, for use in solid state drives (SSDs).
Hardware
Oct 10, 2014
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(Phys.org) -- Japan-based storage experts, Buffalo, has introduced a new line of solid state drives (SSDs) that use MRAM cache (instead of standard SDRAM). The company’s new line of solid state drives went on show this ...
(PhysOrg.com) -- At the human scale, the tightly wrapped spinning columns of air in a tornado contain terrifying destructive power that ravages communities. At the nanoscale, however, closely coiled magnetic vortices hold ...
General Physics
Feb 2, 2009
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Tablets are fast becoming the media device of choice nowadays for work and play, particularly with the advent of iPads and the Samsung Galaxy Tab into the mobile device market. With a volume of 19.5 million of media tablet ...
Hardware
Nov 17, 2011
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Seagate is now shipping the second generation of Momentus XT, its groundbreaking solid state hybrid drive for consumer and commercial laptops and the company’s fastest drive ever for personal computers. With a simple ...
Hardware
Nov 29, 2011
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SanDisk Corporation today unveiled its third-generation family of solid-state drives (SSDs). Using multi-level cell (MLC) NAND flash memory technology, SanDisk’s G3 Series establishes new benchmarks in performance and price-performance ...
Hardware
Jan 8, 2009
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(Phys.org)—The transparent electronics that were pioneered at Oregon State University may find one of their newest applications as a next-generation replacement for some uses of non-volatile flash memory, a multi-billion ...
Electronics & Semiconductors
Sep 14, 2012
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Russian scientists have developed a theoretical model of quantum memory for light, adapting the concept of a hologram to a quantum system. These findings from Anton Vetlugin and Ivan Sokolov from St. Petersburg State University ...
Quantum Physics
Oct 21, 2014
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The idea of computing systems based on controlling atomic spins just got a boost from new research performed at the Massachusetts Institute of Technology (MIT) and the U.S. Department of Energy's (DOE) Brookhaven National ...
Quantum Physics
Jan 28, 2015
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IBM today announced a materials science breakthrough at the molecular level that could pave the way for a new class of non-volatile memory and logic chips that would use less power than today's silicon devices like cell phones. ...
Electronics & Semiconductors
Mar 21, 2013
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