Organic flash memory developed

(PhysOrg.com) -- Researchers at the University of Tokyo have developed a non-volatile memory that has the same basic structure as a flash memory but is made from cheap, flexible, organic materials.

Scientists develop fatigue-free ferroelectric material

Researchers at the Ningbo Institute of Materials Technology and Engineering (NIMTE) of the Chinese Academy of Sciences, in collaboration with research groups from the University of Electronic Science and Technology of China ...

Electron-bending effect could boost computer memory

A new magnetic material developed by RIKEN physicists could boost computer memory storage by enabling higher memory density and faster memory writing speeds. Their research has been published in the journal Nature Communications.

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