Researchers from CICnanoGUNE and the University of Cambridge have developed a new technology in the magnetic cooling of chips based on the straining of materials. Compared with the current technologies, this advance enables ...
General Physics
Feb 20, 2013
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(Phys.org)—Toshiba has announced a low-power embedded SRAM memory chip which may make future mobile devices last longer. Presenting its SRAM developments at the International Solid-State Circuit Conference in San Francisco ...
Samsung Electronics today announced that it is the first in the industry to start mass producing 32 gigabyte (GB) memory modules, essential for cloud computing and advanced server systems, using 30 nanometer (nm) class four ...
Hardware
May 31, 2011
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Samsung Electronics today announced that it has started the industry's first production of a high-performance toggle DDR 2.0 multi-level-cell (MLC) memory chip. The new NAND flash chip features a 64 gigabit (Gb) density, ...
Electronics & Semiconductors
May 13, 2011
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Japan is moving towards ending restrictions on mobile telephone users switching operators or using an overseas network by changing the SIM memory card, a government official said Monday.
Telecom
Mar 29, 2010
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Toshiba Corporation today announced breakthroughs in NAND flash that secure major advances in chip density and performance. In the 19 nanometer generation, Toshiba has developed a 3-bit-per-cell 128 gigabit (Gb) chip with ...
Electronics & Semiconductors
Feb 23, 2012
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(Phys.org)—For the first time, researchers have designed a special material interface that has been shown to add to and to improve the functioning of non-silicon-based electronic devices, such as those used in certain kinds ...
General Physics
Feb 19, 2013
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Samsung Electronics today announced the development of an eight gigabyte registered dual inline memory module based on its advanced Green DDR3 DRAM. The new memory module, which has just been successfully tested by major ...
Electronics & Semiconductors
Dec 8, 2010
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The EU Commission fined the world's biggest memory chip makers, including Samsung, Infineon and Toshiba, a total of 331 million euros (403 million dollars) on Wednesday for operating a cartel.
Business
May 19, 2010
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Toshiba Corp. has announced that it today started mass production of NAND flash memories fabricated with 24nm process technology.
Electronics & Semiconductors
Aug 31, 2010
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