If there were a Hall of Fame for materials, manganites would be among its members. Some manganites, compounds of manganese oxides, are renowned for colossal magnetoresistance – the ability to suddenly boost resistance ...
Superconductivity
Jul 15, 2011
14
0
A team of scientists at Rutgers University has found a material in which an electric field can control the overall magnetic properties of the material. If the magnetoelectric effect discovered by the Rutgers group can be ...
General Physics
Aug 23, 2010
2
0
Collaboration by chemists, physicists and materials scientists at the University of Pennsylvania has created a simple and inexpensive method to rapidly grow centimeter-scale membranes of binary nanocrystal superlattices, ...
Nanomaterials
Jul 22, 2010
0
0
A group of researchers from Tohoku University has unveiled a new material that exhibits enormous magnetoresistance, paving the way for developments in non-volatile magnetoresistive memory (MRAM).
Condensed Matter
Jun 9, 2023
0
44
The National Institute for Materials Science (NIMS) has achieved a tunnel magnetoresistance (TMR) ratio of 631% at room temperature, breaking the previous world record, which had stood for 15 years.
General Physics
May 9, 2023
0
22
Magnetoresistive random access memory (MRAM) is the top candidate for next-generation digital technology. However, manipulating MRAM efficiently and effectively is challenging. An interdisciplinary research team based at ...
Nanomaterials
Sep 24, 2020
0
22
A research team, led by Professor Tetsuo Endoh at Tohoku University, has successfully developed 128Mb-density spin-transfer torque magnetoresistive random access memory (STT-MRAM) with a write speed of 14 ns for use in embedded ...
Hardware
Dec 28, 2018
0
6
Electronics could work faster if they could read and write data at terahertz frequency, rather than at a few gigahertz. Creating such devices would be eased with materials that can undergo a huge change in how easily they ...
Nanophysics
Feb 20, 2018
0
18
Physicists at the U.S. Department of Energy's Ames Laboratory compared similar materials and returned to a long-established rule of electron movement in their quest to explain the phenomenon of extremely large magnetoresistance ...
General Physics
Dec 7, 2017
0
2
South Korea's Hynix Semiconductor and Japanese electronics giant Toshiba said Wednesday they have agreed to jointly develop a next-generation memory device.
Electronics & Semiconductors
Jul 13, 2011
0
0
