Random-access memory (RAM) is a fast electronic device used in computers to temporarily store data. Traditional RAM is based on the flow of electrical current for data processing. To make RAM faster, more energy efficient ...
General Physics
Dec 5, 2012
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Researchers have demonstrated theoretically that oscillation of 5–140 GHz is possible by supplying direct current to a ferromagnetic nanocontact device.
General Physics
Nov 8, 2012
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A discovery by New York University physicists that has potential to significantly enhance computer memory has been cited by Applied Physics Letters as "one of the most notable" articles the journal has published over the ...
General Physics
Oct 12, 2012
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Dutch researchers from the Eindhoven University of Technology have successfully made a 'magnetic domain-wall ratchet' memory, a computer memory that is built up from moving bits of magnetised areas. This memory potentially ...
Nanophysics
Jul 23, 2012
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One bit of digital information stored on a hard disk currently consists of about 3 million magnetic atoms. Researchers from Germany and Japan have now developed a magnetic memory with one bit per molecule. By an electric ...
General Physics
Jul 4, 2012
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Using individual molecules instead of electronic or magnetic memory cells would revolutionise data storage technology, as molecular memories could be thousand-fold smaller. Scientists of Kiel University took a big step towards ...
Nanophysics
Jun 14, 2012
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Information in most computer memories is stored in the form of ‘bits’ represented by the polarization of tiny magnets on the surface of memory devices such as the computer’s hard drive. The capacities of these ...
General Physics
May 10, 2012
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(PhysOrg.com) -- The past decade has seen the emergence of the field of spintronics, aimed at increasing the efficiency of information processing and computer memories. The idea behind spintronics is to harness the magnetic ...
Condensed Matter
Feb 24, 2012
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(PhysOrg.com) -- Nanotechnologists from the University of Twente's MESA+ and MIRA research institutes have developed a method for incorporating magnetic elements into non-magnetic materials in a highly controlled way. Using ...
Nanophysics
Feb 14, 2012
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Solid-state memory is seeing an increase in demand due to the emergence of portable devices such as tablet computers and smart phones. Spin-transfer torque magnetoresistive random-access memory (STT-MRAM) is a new type of ...
General Physics
Feb 2, 2012
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