Taking transistors into a new dimension

A new breakthrough could push the limits of the miniaturization of electronic components further than previously thought possible. A team at the Laboratoire d'Analyse et d'Architecture des Systèmes (LAAS) and Institut d'Électronique, ...

Path towards non-Si devices presented at IEDM 2012

At this week's IEEE International Electron Devices Meeting (IEDM 2012), imec addressed key challenges of scaling beyond silicon-channel finFETs. Imec showed that channel mobility can be boosted by growing non-Si channels ...

Wearable electronics - the next fashion fad?

(Phys.org) -- When most of us think of electronics, we think of the sturdy stability of silicon and plastic. Flexibility is a trait that belongs to the organic world, where materials come in all shapes and stiffness. However, ...

NEC Integrates NanoBridge in the Cu Interconnects of Si LSI

NEC Corporation, in collaboration with the National Institute of Materials Science, today announced the successful integration of NanoBridge, a solid electrolyte non-volatile crossbar switch, in Cu interconnects placed on ...

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