Electron-bending effect could boost computer memory

A new magnetic material developed by RIKEN physicists could boost computer memory storage by enabling higher memory density and faster memory writing speeds. Their research has been published in the journal Nature Communications.

14 parameters in one go: New instrument for optoelectronics

An HZB physicist has developed a new method for the comprehensive characterization of semiconductors in a single measurement. The "Constant Light-Induced Magneto-Transport (CLIMAT)" is based on the Hall effect and allows ...

Hall effect uncovers hidden symmetry in spin-ice

Physicists from the University of Augsburg succeeded in distinguishing chiral orders with similar magnetization but an opposite sense of rotation through electrical measurements at low temperatures. This is relevant for fundamental ...

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