For the first time, researchers from CNRS France and ETH Zurich have succeeded in producing high-performance high-electron-mobility transistors (HEMTs) made of gallium nitride (GaN) on a silicon(110) wafer. This makes these ...
Electronics & Semiconductors
Sep 21, 2011
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Researchers from North Carolina State University have patented technology that is expected to revolutionize the global energy and communications infrastructure – and create U.S. jobs in the process.
Electronics & Semiconductors
Oct 4, 2010
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Epitaxy, or growing crystalline film layers that are templated by a crystalline substrate, is a mainstay of manufacturing transistors and semiconductors. If the material in one deposited layer is the same as the material ...
Nanomaterials
Apr 15, 2016
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Physicists at The University of Texas at Austin, in collaboration with colleagues in Taiwan and China, have developed the world's smallest semiconductor laser, a breakthrough for emerging photonic technology with applications ...
Optics & Photonics
Jul 26, 2012
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Volkmar Dierolf and an international team demonstrate the possibility of tuning the color of a GaN LED by changing the time sequence at which the operation current is provided to the device.
Optics & Photonics
Apr 29, 2019
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The demand for faster computers is growing rapidly and the rise of big data demands novel solutions be explored to deliver quicker results.
Quantum Physics
Feb 15, 2017
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Although silicon semiconductors are nearly universal in modern electronics, devices made from silicon have limitations—including that they cease to function properly at very high temperatures. One promising alternative ...
Condensed Matter
Nov 8, 2013
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Terahertz rays -- radiation between microwaves and infrared rays on the electromagnetic spectrum -- are a promising means of detecting explosives, but they've proven hard to generate cost effectively. So far, solid-state ...
General Physics
Dec 16, 2010
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Panasonic today announced the development of a Gallium Nitride (GaN) -based monolithic inverter integrated circuit (IC) for motor drive. The integrated six GaN-based transistors can be independently driven in a single chip, ...
Electronics & Semiconductors
Dec 8, 2009
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(Phys.org) —Engineering researchers at the University of Arkansas have achieved the highest efficiency ever in a 9 millimeter-squared solar cell made of gallium arsenide. After coating the cufflink-sized cells with a thin ...
Nanomaterials
Apr 22, 2014
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