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Silicon oxide memories transcend a hurdle

A Rice University laboratory pioneering memory devices that use cheap, plentiful silicon oxide to store data has pushed them a step further with chips that show the technology's practicality.

Taiwan engineers defeat limits of flash memory

(Phys.org)—Taiwan-based Macronix has found a solution for a weakness in flash memory fadeout. A limitation of flash memory is simply that eventually it cannot be used; the more cells in the memory chips are erased, the ...

Intel sets sights on new Ultrabook SSD specs

(Phys.org) -- Intel reportedly plans to standardize SSD specifications for its Ultrabook platform, in line with its resolve to lead the way toward slimmer, faster laptops. Intel wants a new SSD connectivity standard because ...

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