Researchers at UC Santa Barbara, in collaboration with University of Notre Dame, have recently demonstrated the highest reported drive current on a transistor made of a monolayer of tungsten diselenide (WSe2), a 2-dimensional ...
Nanophysics
Jun 21, 2013
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Scientists at Rice University and Oak Ridge National Laboratory (ORNL) have advanced on the goal of two-dimensional electronics with a method to control the growth of uniform atomic layers of molybdenum disulfide (MDS).
Nanomaterials
Jun 10, 2013
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When the dry lubricant, molybdenum disulfide, is stripped down to a single layer of atoms, a tightly bound quasi-particle comprised of two electrons and a hole forms with unique spin and valley properties, researchers from ...
Condensed Matter
Dec 3, 2012
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(Phys.org) -- Engineers from several research organizations working together in Japan have developed a working prototype of a Mott transistor, a possible alternative to the standard silicon based field-effect transistor (FET). ...
Creating semiconductor structures for high-end optoelectronic devices just got easier, thanks to University of Illinois researchers.
Nanophysics
Dec 22, 2011
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(PhysOrg.com) -- A new transistor made from graphene - the world's thinnest material - has been developed by a research team at the University of Southampton.
Nanophysics
Feb 8, 2011
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An international team of researchers featuring Texas A&M University physicist Jairo Sinova has announced a breakthrough that gives a new spin to semiconductor nanoelectronics and the world of information technology.
General Physics
Dec 23, 2010
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(PhysOrg.com) -- Rice University researchers have discovered thin films of nanotubes created with ink-jet printers offer a new way to make field-effect transistors (FET), the basic element in integrated circuits.
Nanomaterials
May 25, 2010
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(PhysOrg.com) -- A new "transfer-printing" method of making light-sensitive semiconductors could make solar cells, night-vision cameras, and a range of other devices much more efficient, and could transform the solar industry.
(PhysOrg.com) -- IBM researchers are hopeful that, over the next decade, silicon-based transistors will be replaced by carbon-based transistors. IBM has already laid out the ground work for carbon-based transistors.
