SKoreans demonstrate spin-injected field effect transistor
South Korean scientists said Friday they had demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure.
South Korean scientists said Friday they had demonstrated a spin-injected field effect transistor in a high-mobility InAs heterostructure.
Nanophysics
Sep 18, 2009
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Field-effect transistors (FETs) based on single-walled carbon nanotubes (SWNTs) exhibit a range of optoelectronic effects including near-infrared electroluminescence.
Nanophysics
Sep 8, 2009
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(PhysOrg.com) -- Electronic gadgetry gets tinier and more powerful all the time, but at some point, the transistors and myriad other component parts will get so little they won't work. That's because when things get really ...
Nanophysics
Aug 13, 2009
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An international team of researchers from the Netherlands, Russia and Austria discovered that monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors (SAMFETs). This opens ...
Nanophysics
Aug 11, 2009
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(PhysOrg.com) -- Engineering researchers at the University of Arkansas have fabricated and tested a unique biosensor that measures concentrations of potassium and hydrogen ions in the human heart with high specificity. The ...
Soft Matter
Apr 23, 2009
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(PhysOrg.com) -- After announcing last April a method for growing exceptionally long, straight, numerous and well-aligned carbon cylinders only a few atoms thick, a Duke University-led team of chemists has now modified that ...
Nanomaterials
Jan 21, 2009
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